| 摘要 |
PURPOSE:To improve the corrosion resistance of the wire and prevent the disconnection by forming the wire of Al alloy on the semiconductor substrate and an alumina film containing one or more of Cu, Mg, Ni, Cr, Mn, Ti and Y thereon. CONSTITUTION:An SiO2 film 5 on the main surface of the semiconductor substrate 4 having a collector 1, a base 2 and an emitter 3 while an opening is provided on the emitter 3. Through the opening, formed is the wire layer 7 of Al alloy, for example, Al-Si(2%)-Cu(2%) connected to the emitter. Then, the alumina film 8 containing Cu, for instance, is applied over the entire layer by sputtering or the like. Accordingly, the stable and better passivation function of the alumina film containing metal and the combination between the alumina film and the Al alloy can improve the corrosion resistance thereby reducing possible corrosion and improving the reliability. |
