| 摘要 |
PURPOSE:To obtain the title ceramic which is useful as the conductive material of a multilayered ceramic circuit substrate contg. AlN as the insulating material and has high melting point and low electric resistance by compounding ZrB2 and/or TiB2, B4C and Al4C3 in the specific ratios. CONSTITUTION:(A) ZrB2 and/or TiB2, (B) B4C and (C) Al4C3 are compounded in such a manner that 0.5-10 pts.wt. C components are regulated for 100 pts.wt. of the total amounts of A+B and the ratio of A/B weight ratio=80-90/20-10 is regulated. The material is sufficiently mixed and is thereafter sintered at about 1800 deg.C, by which said ceramic having almost equal sheet resistance as that of copper even at the high sintering temp. of about 1800 deg.C is obtd. |
