发明名称 STORAGE UNIT, MEMORY, AND METHOD FOR CONTROLLING STORAGE UNIT
摘要 A storage unit includes a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port. The U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area. By controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move. By controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.
申请公布号 US2016231959(A1) 申请公布日期 2016.08.11
申请号 US201615133897 申请日期 2016.04.20
申请人 Huawei Technologies Co., Ltd. 发明人 Lin Yinyin;Wei Zhulin;Zhao Junfeng;Yang Wei;Fu Yarong;Yang Kai
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A storage unit, comprising: a U-shaped magnetic track comprising, a first port disposed at one end of a top of the U-shaped magnetic track and connected to a cathode bus,a second port disposed at another end of the top of the U-shaped magnetic track and connected to an anode bus,a first storage area, anda second storage area; a first drive circuit connected to a first drive port and configured to drive the first storage area; a second drive circuit connected to a second drive port and configured to drive the second storage area; wherein by controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move; and wherein by controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain wall in the second storage area is driven to move.
地址 Shenzhen CN