| 摘要 |
PURPOSE:To improve light-receiving sensitivity by forming a semi-conductor base plate on which a light-receiving element's pn contact is made thinner than an IC circuit's emitter layer. CONSTITUTION:An n<->-layer 3 is formed on a p<->Si base plate through an n<+>fill-in layer and separated by a p<+>-layer 4. After formation of a phosphorous base 5, phosphorous type and n<+>-type electrode take-out sections are prepared in an n<+>- emitter 6 having depth of approximately 1mum, a collector pull-out layer 7 and other island sections. A photocell unit constituted by an approximately 0.1mum deep p<+>n contact 12 is provided by boring a hole on an oxide film 10 and driving B ion through a thin oxide film 11. An electrode is prepared by making selective boring on the film 10. As the pn contact is provided at the final processing stage in this manner, it can be formed in any depth desired, and as it is shallower than the emitter dispersion layer, it is possible not only to improve light-receiving sensitivity of the photocell but also to reduce size of the unit by using IC for the photocell. |
