| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents the diffusion of copper. <P>SOLUTION: The semiconductor device 1 includes a semiconductor element layer 2 on which a plurality of semiconductor elements (not shown) are formed, an interconnection layer 3, first nitride films 4, copper interconnections 5, barrier layers 6, adhesive layers 7, a second nitride layer 8, and a wire 9. Each first nitride film 4 covers part of the under surface of each copper interconnection 5, and is extended between copper interconnections 5 and 5 adjacent to each other. Each barrier layer 6 is formed continuously to cover the upper surface and the side faces of each copper interconnection 5. The adhesive layer 7 is formed to cover the upper surface of the barrier layer 6. The second nitride layer 8 covers the side faces of each barrier layer 6 and adhesive layer 7 and an area on the upper surface of the adhesive layer 7 excluding a wire bonding area A<SB>W</SB>, and is formend across between copper interconnections 5 and 5 adjacent to each other so as to be in contact with the first nitride film 4. <P>COPYRIGHT: (C)2008,JPO&INPIT |
