发明名称 Linear-logarithmic image sensors and electronic devices including the same
摘要 A linear-logarithmic image sensor includes a pixel array, a signal generation unit, and a control unit. The pixel array includes at least one unit pixel that generates a leakage signal corresponding to leakage photo-charges and that sequentially generates a first analog signal corresponding to a portion of accumulated photo-charges and a second analog signal corresponding to a whole of the accumulated photo-charges by resetting a floating diffusion node and transferring the accumulated photo-charges from a storage node to the floating diffusion node in response to first and second transfer control signals that are sequentially activated. The signal generation unit includes at least one signal generation block that generates a final analog signal based on the leakage signal, the first analog signal, and the second analog signal. The control unit controls the pixel array and the signal generation unit.
申请公布号 US9413991(B2) 申请公布日期 2016.08.09
申请号 US201514592495 申请日期 2015.01.08
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Ji-Won;Yang Dong-Joo;Oh Min-Seok;Lim Moo-Sup
分类号 H04N3/14;H04N5/335;H04N5/355 主分类号 H04N3/14
代理机构 Myers Bigel & Sibley, P.A. 代理人 Myers Bigel & Sibley, P.A.
主权项 1. A linear-logarithmic image sensor, comprising: a pixel array including a unit pixel, the unit pixel comprising a photoelectric conversion device that generates photo-charges in response to incident light, a storage node connected to the photoelectric conversion device and that stores the photo-charges generated by the photoelectric conversion device, and a floating diffusion node connected to the storage node, wherein the unit pixel generates a leakage signal in response to leakage photo-charges that leak from the storage node to the floating diffusion node while photo-charges that are generated by the photoelectric conversion device in response to incident light are accumulated in the storage node, and wherein the unit pixel sequentially generates a first analog signal corresponding to a first portion of photo-charges accumulated in the storage node and a second analog signal corresponding to a second portion of the photo-charges accumulated in the storage node by transferring the accumulated photo-charges in the storage node to the floating diffusion node in response to first and second transfer control signals; a signal generation unit including a signal generation block that generates a final analog signal in response to the leakage signal, the first analog signal, and the second analog signal; and a control unit coupled to the pixel array and to the signal generation unit, the control unit configured to control the pixel array and the signal generation unit; wherein the first transfer control signal has a first voltage level, and the second transfer control signal has a second voltage level that is higher than the first voltage level.
地址 KR