发明名称 |
Resist composition and patterning process |
摘要 |
A resist composition comprising (A) an alkali-insoluble or substantially insoluble polymer having acidic functional groups protected with acid labile groups, which polymer becomes alkali-soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a 1,2-naphthoquinonediazidosulfonyl group-bearing compound has a high resolution and sensitivity, and provides resist patterns of excellent plating resistance when used in UV lithography at an exposure light wavelength of at least 300 nm.
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申请公布号 |
US2001044066(A1) |
申请公布日期 |
2001.11.22 |
申请号 |
US20010835375 |
申请日期 |
2001.04.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KATO HIDETO;NISHIKAWA KAZUHIRO;HIRANO YOSHINORI;TAKEMURA KATSUYA |
分类号 |
G03F7/023;G03F7/039;G03F7/16;(IPC1-7):G03F7/023;G03F7/30 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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