Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device

摘要

Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

主权项

1. A method of manufacture comprising:
providing a photolithographic mask including
a substrate having a first surface and a second surface on an opposite side of the substrate from the first surface,a reflection film on the first surface of the substrate,a light absorbing layer on the reflection film, anda stress inducing layer on the second surface of the substrate; detecting a deviation of the photolithographic mask; and in response to the detected deviation, altering a state of one or more selected portions of the stress inducing layer to alter stress applied to the substrate by the stress inducing layer and thereby alter a shape of the photolithographic mask.