TPIR APPARATUS FOR MONITORING TUNGSTEN HEXAFLUORIDE PROCESSING TO DETECT GAS PHASE NUCLEATION, AND METHOD AND SYSTEM UTILIZING SAME

摘要

Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

主权项

1. A method of carrying out vapor deposition, comprising contacting a substrate with a gas mixture containing gas species that can cause gas phase nucleation and/or chemical attack under process conditions supportive of such behavior, said process comprising:
impinging radiation on a sample of said gas mixture for interaction of the radiation with one or more gas species in the gas mixture to produce output radiation from said interaction having a characteristic that is indicative of onset of said gas phase nucleation and/or chemical attack when said onset occurs; and processing said output radiation to responsively generate an output indicative of onset of said gas phase nucleation and/or chemical attack when said onset occurs.