发明名称 ADDITIVE C CAPABLE OF CHANGING MICROVIA-FILLING METHOD BY TSV COPPER PLATING, AND ELECTROPLATING SOLUTION CONTAINING SAME
摘要 An additive C capable of changing microvia-filling method by TSV copper plating, and electroplating solution containing same. The additive C contains by mass percentage: 5%-10%, one of polyethylene glycol or polyvinyl alcohol with the molecular weight of 200-100,000, or the mixture with different molecular weight thereof; 0.001%-0.5% isomer of the surfactant which including the alkylphenol polyoxyethylene ether or fatty alcohol-polyoxyethylene ether; and the solvent is water. The electroplating solution containing the additive C could be used for microvia-filling by TSV copper plating, the electroplating current distribution could be adjusted reasonably to realize the smooth transition between the conformal and bottom-up plating, so as to reduce the possibility of the seam or void in the coating, realize the high-speed electroplating, reduce the thickness of the copper layer, reduce the TSV plating duration and the cost of the chemical mechanical polishing (CMP), and significantly improve the production efficiency.
申请公布号 US2016168737(A1) 申请公布日期 2016.06.16
申请号 US201314908778 申请日期 2013.12.10
申请人 SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. 发明人 WANG Su;YU Xianxian;MA Li;LI Yanyan
分类号 C25D3/38 主分类号 C25D3/38
代理机构 代理人
主权项 1. An additive C capable of changing microvia-filling method by TSV copper plating, wherein, the additive C contains by mass percentage: 5%-10%, one of polyethylene glycol or polyvinyl alcohol with the molecular weight of 200-100,000, or the mixture with different molecular weight thereof; 0.001%-0.5% isomer of the surfactant which including the alkylphenol polyoxyethylene ether or fatty alcohol-polyoxyethylene ether; and the solvent is water.
地址 Shanghai CN