APPARATUS FOR FABRICATING SEMICONDUCTOR STRUCTURES

摘要

An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber (102) and a plurality of first material sources (106-110) positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer (204) on a substrate (202). The plurality of first material sources includes an oxygen source (116). At least one second material source (112-114) is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer (206) overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism (132) configured to adjust the partial pressure of oxygen in the chamber.