3D IC with serial gate MOS device, and method of making the 3D IC

摘要

A die stack comprises a first integrated circuit (IC) die having at least a first device comprising a first source, a first drain and a first gate electrode above a first channel region between the first source and the first drain. A second IC die has at least a second device comprising a second source, a second drain and a second gate electrode above a second channel region between the second source and the second drain. The second gate electrode is connected to the first gate electrode by a path including a first through substrate via (TSV), the second drain connected to the first source by a path including a second TSV.

主权项

1. A method comprising joining a first integrated circuit (IC) die having at least a first transistor comprising a first gate electrode to a second IC die having at least a second transistor comprising a second gate electrode, the joining including:
electrically connecting the second gate electrode to the first gate electrode by a path including a first through substrate via (TSV), and electrically connecting the second transistor in series with the first transistor by path including a second TSV, wherein the step of electrically connecting the second transistor in series includes: forming the second TSV with an offset from a source of the first transistor and a drain of the second transistor, forming respective contacts on the source of the first transistor and the drain of the second transistor, and forming respective conductive lines in respective interconnect layers above the source of the first transistor and the drain of the second transistor, for coupling the contact on the source to the contract on the drain.