| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enable a target fuse to cut by restraining damage applied to an adjacent fuse when the fuse formed in a semiconductor device is cut. <P>SOLUTION: The semiconductor device is provided with a lower layer substrate, the fuse which is formed above the lower layer substrate and can be cut by irradiation of light, a silicon oxide film which is formed on upper parts of the fuse and a part exposed on the surface of the lower layer substrate, and a silicon nitride film formed on the silicon oxide film. In the silicon oxide film, film thickness of the part formed on the surface of the lower layer substrate is made thicker than the fuse. An aperture is formed above the part in which the fuse is formed of the silicon nitride film. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
