| 发明名称 |
SELF-ALIGNED VERTICAL CNT ARRAY TRANSISTOR |
| 摘要 |
A transistor device includes an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; a gate wrapped around the array of CNTs; and source and drain contacts arranged over the fin structures; wherein each of the fin structures have a trapezoid shape or parallel sides that are oriented about 90° with respect to the substrate. |
| 申请公布号 |
US2017025614(A1) |
申请公布日期 |
2017.01.26 |
| 申请号 |
US201615287214 |
申请日期 |
2016.10.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cao Qing;Cheng Kangguo;Li Zhengwen;Liu Fei;Zhang Zhen |
| 分类号 |
H01L51/00;H01L51/05;H01L27/28 |
主分类号 |
H01L51/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor device, comprising:
an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; and source and drain contacts arranged over the fin structures; wherein each of the fin structures has a trapezoid shape defined by a length, a first width, and a second width, the first width being greater than the second width. |
| 地址 |
ARMONK NY US |
