Semiconductor device

摘要

One semiconductor device includes one parallel transistor for connecting in parallel multiple vertical transistors disposed in an active region on a semiconductor substrate. The parallel transistor includes semiconductor pillars that project out in a direction perpendicular to a main surface of the semiconductor substrate; a lower diffusion layer that is disposed below the semiconductor pillars; upper diffusion layers that are each disposed on an upper section of the semiconductor pillars; and gate electrodes disposed, with a gate insulator film therebetween, on the entire side surfaces of the semiconductor pillars. The upper diffusion layers are connected to one upper contact plug that is disposed over the upper diffusion layers.

主权项

1. A semiconductor device comprising one parallel transistor in which a plurality of vertical transistors disposed in an active region on a semiconductor substrate are connected in parallel, wherein the parallel transistor comprises:
a plurality of semiconductor pillars protruding out in a direction perpendicular to a main surface of the semiconductor substrate; a lower diffusion layer disposed below the plurality of semiconductor pillars; a plurality of upper diffusion layers, disposed respectively at the top of the plurality of semiconductor pillars; and a gate electrode disposed over the side surfaces, in their entirety, of the plurality of semiconductor pillars, with the interposition of a gate insulating film; and wherein the plurality of upper diffusion layers are connected to one upper contact plug disposed on the plurality of upper diffusion layers, and wherein the one upper contact plug is connected to a wiring line disposed on the one upper contact plug.