发明名称 Light-emitting diode and application therefor
摘要 A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.
申请公布号 US9536924(B2) 申请公布日期 2017.01.03
申请号 US201514745271 申请日期 2015.06.19
申请人 SEOUL VIOSYS CO., LTD. 发明人 Chae Jong Hyeon;Lee Joon Sup;Roh Won Young;Kang Min Woo;Jang Jong Min;Kim Hyun A;Suh Daewoong
分类号 H01L27/15;H01L33/14;H01L33/40;H01L33/44;H01L33/24;H01L23/00;H01L25/075;H01L33/20;H01L33/38;H01L33/08 主分类号 H01L27/15
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A lighting module including a plurality of light emitting diodes, at least one of the light emitting diodes comprising: a transparent substrate having a first surface, a second surface and a side surface connecting the first surface and the second surface; a first conductive type semiconductor layer placed on the first surface of the transparent substrate; a second conductive type semiconductor layer placed on the first conductive type semiconductor layer; an active layer placed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first pad electrically connected to the first conductive type semiconductor layer; a second pad electrically connected to the second conductive type semiconductor layer, and a current spreading layer contacting an edge of the first conductive type semiconductor layer and formed on a portion of an area above the second conductive type semiconductor layer; wherein light generated in the active layer is discharged through the transparent substrate via the second surface of the transparent substrate, and the at least one light emitting diode has a beam angle of 140° or more in at least one axial direction thereof, and wherein the at least one light emitting diode further comprises a conformal coating layer covering the second surface of the transparent substrate, and a total thickness of the transparent substrate and the conformal coating ranges from 225 μm to 600 μm.
地址 Ansan-Si KR