| 发明名称 | Transistors with an extension region having strips of differing conductivity type | ||
| 摘要 | A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions. | ||
| 申请公布号 | US9337333(B2) | 申请公布日期 | 2016.05.10 |
| 申请号 | US201414448198 | 申请日期 | 2014.07.31 |
| 申请人 | Micron Technology, Inc. | 发明人 | Smith Michael;Mikhalev Vladimir;Sharma Puneet;Shafi Zia Alan;Fulford Henry Jim |
| 分类号 | H01L29/78;H01L21/266;H01L29/06;H01L29/08;H01L29/423;H01L29/66;H01L27/105 | 主分类号 | H01L29/78 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A transistor, comprising: a gate dielectric over a semiconductor having a first conductivity type; a control gate over the gate dielectric; source and drain regions having a second conductivity type in the semiconductor having the first conductivity type; and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions; wherein a portion of the semiconductor having the first conductivity type extends from one strip having the second conductivity type to an adjacent strip having the second conductivity type in a direction orthogonal to a direction extending from the source region to the drain region. | ||
| 地址 | Boise ID US | ||