Forming transistors without spacers and resulting devices

摘要

Methods for forming gates without spacers and the resulting devices are disclosed. Embodiments may include forming a channel layer on a substrate; forming a dummy gate on the channel layer; forming an interlayer dielectric (ILD) on the channel layer and surrounding the dummy gate; forming a trench within the ILD and the channel layer by removing the dummy gate and the channel layer below the dummy gate; forming an un-doped channel region at the bottom of the trench; and forming a gate above the un-doped channel region within the trench.

主权项

1. A method comprising:
forming a channel layer on a substrate; forming a dummy gate on the channel layer; forming an interlayer dielectric (ILD) on the channel layer and surrounding the dummy gate; forming a trench within the ILD and the channel layer by removing the dummy gate and the channel layer below the dummy gate; forming an un-doped channel region at the bottom of the trench; conformally forming a high-k dielectric layer within the trench after forming the un-doped channel region; filling the trench with a metal to form a gate above the un-doped channel region; removing a portion of the substrate below the trench after removing the channel layer below the dummy gate; and forming the un-doped channel region in the substrate below the trench and in the channel layer below the dummy gate wherein the gate does not include spacers and the ILD is in direct contact with the high-k dielectric layer.