SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device comprises: conductive layers and insulating layers which are alternately stacked; an opening for penetrating the conductive layers and the insulating layers; a first semiconductor layer formed inside the opening; a second semiconductor layer formed inside the first semiconductor layer; a capping layer formed inside the opening, and positioned on upper parts of the first semiconductor layer and the second semiconductor layer; and a liner layer interposed between the first semiconductor layer and the second semiconductor layer, and penetrating the capping layer as protruding more than the first and second semiconductor layers.