发明名称 |
POWER SEMICONDUCTOR DEVICE FOR IGNITER |
摘要 |
A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.
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申请公布号 |
US2011134581(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US20100877348 |
申请日期 |
2010.09.08 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
GODO SHINSUKE;YASUDA YUKIO;KAWAMOTO ATSUNOBU |
分类号 |
F23Q3/00 |
主分类号 |
F23Q3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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