发明名称 POWER SEMICONDUCTOR DEVICE FOR IGNITER
摘要 A power semiconductor device for an igniter comprises: a semiconductor switching device causing a current to flow through a primary side of an ignition coil or shutting off the current flowing through the primary side of the ignition coil; an integrated circuit driving and controlling the semiconductor switching device; and a temperature sensing element sensing temperature of the semiconductor switching device, wherein the integrated circuit including an overheat protection circuit limiting a current through the semiconductor switching device to a value lower than a current through the semiconductor switching device during normal operation, when temperature sensed by the temperature sensing element is over predetermined temperature.
申请公布号 US2011134581(A1) 申请公布日期 2011.06.09
申请号 US20100877348 申请日期 2010.09.08
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 GODO SHINSUKE;YASUDA YUKIO;KAWAMOTO ATSUNOBU
分类号 F23Q3/00 主分类号 F23Q3/00
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