METHODS FOR FABRICATING SEMICONDUCOR DEVICES

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to obtain an expanded sigma profile by selectively eliminating a part of a sigma profile. CONSTITUTION: A semiconductor substrate(101) includes a silicon substrate. A gate electrode(119) is formed on the surface of the semiconductor substrate. A first trench including a first tip is formed on the semiconductor substrate. The first trench is expanded. A second trench including a second tip is formed on the surface of the semiconductor substrate.