发明名称 |
SEMICONDUCTOR LIGHT EMISSION DEVICE AND MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method that can reduce variation of chromaticity of a semiconductor light emission device by means of correcting chromaticity and stably correctable means of forming phosphor resin.SOLUTION: A method of manufacturing a semiconductor light emission device 100 comprises the steps of: measuring the wavelength of the semiconductor light emission device 100 in advance; determining the adjustment coating amount of a resin sealing material 8 according to the variation of the wavelength; beforehand preparing a shielding plate 5 whose opening area (dimension) is controlled according to the adjustment coating amount; dividing into a shielded area and a non-shielded area by setting the shielding plate 5 at a predetermined position on a substrate 1; and executing pre-processing for controlling wettability on the substrate 1 through the shielding plate 5. A high-wettability area 51 and a low-wettability area 52 are formed on the substrate 1, and when a resin sealing body 8 is formed, the resin sealing body 8 is formed to have a similar figure. |
申请公布号 |
JP2015204386(A) |
申请公布日期 |
2015.11.16 |
申请号 |
JP20140083273 |
申请日期 |
2014.04.15 |
申请人 |
PANASONIC IP MANAGEMENT CORP |
发明人 |
NISHIWAKI KENTARO;MASE KENICHIRO |
分类号 |
H01L33/50;H01L33/54 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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