发明名称 SEMICONDUCTOR LIGHT EMISSION DEVICE AND MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method that can reduce variation of chromaticity of a semiconductor light emission device by means of correcting chromaticity and stably correctable means of forming phosphor resin.SOLUTION: A method of manufacturing a semiconductor light emission device 100 comprises the steps of: measuring the wavelength of the semiconductor light emission device 100 in advance; determining the adjustment coating amount of a resin sealing material 8 according to the variation of the wavelength; beforehand preparing a shielding plate 5 whose opening area (dimension) is controlled according to the adjustment coating amount; dividing into a shielded area and a non-shielded area by setting the shielding plate 5 at a predetermined position on a substrate 1; and executing pre-processing for controlling wettability on the substrate 1 through the shielding plate 5. A high-wettability area 51 and a low-wettability area 52 are formed on the substrate 1, and when a resin sealing body 8 is formed, the resin sealing body 8 is formed to have a similar figure.
申请公布号 JP2015204386(A) 申请公布日期 2015.11.16
申请号 JP20140083273 申请日期 2014.04.15
申请人 PANASONIC IP MANAGEMENT CORP 发明人 NISHIWAKI KENTARO;MASE KENICHIRO
分类号 H01L33/50;H01L33/54 主分类号 H01L33/50
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