| 摘要 |
A surface-emitting type semiconductor laser is provided to reduce the number of oscillation modes and realize a high output by making an inner diameter of a current restraining layer large and a diameter of a light confining area small. A surface-emitting type semiconductor laser includes a first mirror(102), an active layer(103), a second mirror(104), and a current restraining layer(105). The active layer(103) is formed at an upper part of the first mirror(102). The second mirror(104) is formed at an upper part of the active layer(103). The current restraining layer(105) is formed at the upper part or a lower part of the active layer(103). The second mirror(104) has a plurality of concave units(111) arranged inside a surface which is perpendicular to the direction of light emission. A light confining area surrounded by the concave units(111) is formed inside an area surrounded by the current restraining layer(105).
|
