发明名称 Methods for enhancing capacitors having roughened features to increase charge-storage capacity
摘要 Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
申请公布号 US7576380(B2) 申请公布日期 2009.08.18
申请号 US20060502090 申请日期 2006.08.09
申请人 MICRON TECHNOLOGY, INC. 发明人 THAKUR RANDHIR P. S.;MERCALDI GARRY A.;NUTTALL MICHAEL;CHEN SHENLINE;PING ER-XUAN
分类号 H01L27/108;G11C11/404;G11C17/16;H01L21/02;H01L21/285;H01L21/768;H01L21/8242;H01L21/8246;H01L27/115;H01L29/00;H01L29/76;H01L29/94;H01L31/119 主分类号 H01L27/108
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