COMBINED PACKAGED POWER SEMICONDUCTOR DEVICE

摘要

A combined packaged power semiconductor device includes flipped top source low-side MOSFET electrically connected to top surface of a die paddle, first metal interconnection plate connecting between bottom drain of a high-side MOSFET or top source of a flipped high-side MOSFET to bottom drain of the low-side MOSFET, and second metal interconnection plate stacked on top of the high-side MOSFET chip. The high-side, low-side MOSFET and the IC controller can be packaged three-dimensionally reducing the overall size of semiconductor devices and can maximize the chip's size within a package of the same size and improves the performance of the semiconductor devices. The top source of flipped low-side MOSFET is connected to the top surface of the die paddle and thus is grounded through the exposed bottom surface of die paddle, which simplifies the shape of exposed bottom surface of the die paddle and maximizes the area to facilitate heat dissipation.

主权项

1. A combined packaged power semiconductor device, comprising:
a high-side (HS) MOSFET and a low-side (LS) MOSFET, each of said HS and LS MOSFETs comprising a bottom drain, a top gate and a top source; a lead frame comprising a die paddle and a plurality of pins separated and electrically insulated from said die paddle, wherein said LS MOSFET is flipped and stacked on said die paddle forming an electrical connection between said LS source and a top surface of said die paddle, as such said LS source is electrically connected to an exposed bottom surface of said die paddle; a first metal interconnection plate stacked on said drain of said LS MOSFET, wherein said HS MOSFET directly stacked or flipped first and then stacked on said first metal interconnection plate, forming an electrical connection between said HS drain or flipped HS source and said LS drain through said first metal interconnection plate; a second metal interconnection plate stacked and electrically connected to said source of said HS MOSFET or said drain of said flipped HS MOSFET; an integrated circuit (IC) controller stacked on said die paddle, said IC controller comprising a plurality of electrodes, wherein electrical connections between said pins, said electrodes on said IC controller and electrodes of HS and LS MOSFETs are formed; an interposer wherein said gate of flipped LS MOSFET is electrically connected to a conductive top surface of said interposer and a bottom surface of said interposed is stacked on and electrically insulated from said die paddle; and a second groove formed by half etching a top portion of the die paddle corresponding to the position of a gate of the flipped LS MOSFET with a second interposer formed in the second groove while electrically insulated from the die paddle.