HYBRID WIDE-BANDGAP SEMICONDUCTOR BIPOLAR SWITCHES

摘要

A hybrid semiconductor bipolar switch in which a normally-on high-voltage wide-bandgap semiconductor bipolar switch and a normally-off field effect transistor are connected in a cascode (Baliga-pair) configuration. The switch may be constructed as a stacked hybrid device where a discrete transistor is bonded on top of a bipolar switch. Power systems may use plural switches paired with anti-parallel diodes.

主权项

1. A hybrid device comprising:
a transistor, the transistor being a normally-off field effect device comprising a source, a drain, and a gate of the transistor; and a bipolar switch, the bipolar switch being a normally-on wide-bandgap semiconductor device comprising a low voltage terminal, a high-voltage terminal, and a switch gate terminal; wherein the low-voltage terminal of the bipolar switch is connected to the drain, and the switch gate terminal is connected to the source of the transistor, such that operation of the hybrid device is controlled via the gate of the transistor.