发明名称 Trench MOSFET
摘要 A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further comprises etching the trench to a depth of about 1.7 μm.
申请公布号 US9006063(B2) 申请公布日期 2015.04.14
申请号 US201313931637 申请日期 2013.06.28
申请人 STMicroelectronics S.r.l.;STMicroelectronics Asia Pacific Pte Ltd 发明人 Yong Yean Ching;Fortuna Stefania
分类号 H01L21/8242;H01L21/336;H01L21/265;H01L29/423;H01L29/66;H01L29/78 主分类号 H01L21/8242
代理机构 Seed IP Law Group PLLC 代理人 Seed IP Law Group PLLC
主权项 1. A method of forming a trench MOSFET, the method comprising: forming a drain region in a semiconductor substrate; forming a body region in the semiconductor substrate above the drain region, forming the body region including: implanting dopant atoms in the body region of the semiconductor substrate with a first implantation energy;implanting dopant atoms in the body region of the semiconductor substrate with a second implantation energy; andimplanting dopant atoms in the body region of the semiconductor substrate with a third implantation energy; andimplanting dopant atoms in the body region of the semiconductor substrate with a fourth implantation energy; implanting dopant atoms in a source region of the semiconductor substrate above the body region; and forming a trench in the semiconductor substrate, a sidewall of the trench abutting the source, body, and drain regions, the body region having a substantially constant doping concentration along the sidewall of the trench between the source and drain regions.
地址 Agrate Brianza IT