发明名称 |
Trench MOSFET |
摘要 |
A method for forming a trench MOSFET includes doping a body region of the trench MOSFET in multiple ion implantation steps each having different ion implantation energy. The method further comprises etching the trench to a depth of about 1.7 μm. |
申请公布号 |
US9006063(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201313931637 |
申请日期 |
2013.06.28 |
申请人 |
STMicroelectronics S.r.l.;STMicroelectronics Asia Pacific Pte Ltd |
发明人 |
Yong Yean Ching;Fortuna Stefania |
分类号 |
H01L21/8242;H01L21/336;H01L21/265;H01L29/423;H01L29/66;H01L29/78 |
主分类号 |
H01L21/8242 |
代理机构 |
Seed IP Law Group PLLC |
代理人 |
Seed IP Law Group PLLC |
主权项 |
1. A method of forming a trench MOSFET, the method comprising:
forming a drain region in a semiconductor substrate; forming a body region in the semiconductor substrate above the drain region, forming the body region including:
implanting dopant atoms in the body region of the semiconductor substrate with a first implantation energy;implanting dopant atoms in the body region of the semiconductor substrate with a second implantation energy; andimplanting dopant atoms in the body region of the semiconductor substrate with a third implantation energy; andimplanting dopant atoms in the body region of the semiconductor substrate with a fourth implantation energy; implanting dopant atoms in a source region of the semiconductor substrate above the body region; and forming a trench in the semiconductor substrate, a sidewall of the trench abutting the source, body, and drain regions, the body region having a substantially constant doping concentration along the sidewall of the trench between the source and drain regions. |
地址 |
Agrate Brianza IT |