发明名称 CHEMICAL MECHANICAL POLISHING APPARATUS WITH IMPROVED ACCURACY OF MONITORING CONTROLLED PRESSURE
摘要 <p>The present invention relates to a chemomechanical grinding device, capable of forming a chemomechanical grinding process while bringing a grinding surface of a wafer to be in contact with a grinding pad. The device includes: a carrier head pressurizing a wafer on the bottom onto the grinding pad by the pressure of a pressure chamber, by including a membrane formed of a flexible material while forming a lower part of the pressure chamber; a pressure supply part supplying pressure to the pressure chamber through a supply pipe supplying fluid to the pressure chamber; a pressure gauge measuring the pressure supplied through the supply pipe; and a pressure monitoring part monitoring whether the pressure sensed by the pressure gauge reaches the set pressure in a fixed first time range. Thus, the device is able to accurately sense whether the pressure is normally applied to the pressure chamber of the carrier head while the chemomechanical grinding process is being formed.</p>
申请公布号 KR20150018971(A) 申请公布日期 2015.02.25
申请号 KR20130095213 申请日期 2013.08.12
申请人 发明人
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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