首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
摘要
申请公布号
JPS474389(U)
申请公布日期
1972.09.09
申请号
JP19710005855U
申请日期
1971.02.05
申请人
发明人
分类号
F16H57/04;F16H57/05;(IPC1-7):F16H57/05
主分类号
F16H57/04
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Source and body contact structure for trench-DMOS devices using polysilicon
Semiconductor device
Method of manufacturing a semiconductor device
Memory architecture of 3D array with diode in memory string
Method for fabricating capacitor
Methods of forming metal silicide regions on a semiconductor device
Semiconductor chip including a spare bump and stacked package having the same
Charge damage protection on an interposer for a stacked die assembly
Trench interconnect having reduced fringe capacitance
Self-aligned protection layer for copper post structure
Combined packaged power semiconductor device
Integrating multi-output power converters having vertically stacked semiconductor chips
Semiconductor device
Display substrate, method of manufacturing the same and display apparatus having the same
Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)
Methods of forming memory arrays
Semiconductor device and method of fabricating the same
Chuck exhaust openings
Methods of patterning features having differing widths
Systems and methods for laser splitting and device layer transfer