method for manufacturing thin film transistors based on titanium oxides as active layer and thin film transistors thereof

摘要

PURPOSE: A method for manufacturing a thin film transistors based on titanium oxides as an active layer and a thin film transistors thereof is provided to improve charge transfer and the stability of air and moisture by using a titanium oxide as an active layer. CONSTITUTION: An active layer(140) is formed on a substrate(110). An insulating layer(150) is formed on the active layer. The active layer is formed through one among a chemical vapor deposition, an organometallic chemical vapor deposition, an atomic layer deposition, a low pressure chemical vapor deposition, and a plasma enhanced chemical vapor deposition method. The active layer is formed with the organic compound including the titanium.