发明名称 Active metamaterial device and manufacturing method of the same
摘要 Provided are an active metamaterial device operating at a high speed and a manufacturing method thereof. The active metamaterial device includes a first dielectric layer, a lower electrode disposed on the first dielectric layer, a second dielectric layer disposed on the lower electrode, metamaterial patterns disposed on the second dielectric layer, a couple layer disposed on the metamaterial patterns and the second dielectric layer, a third dielectric layer disposed on the couple layer, and an upper electrode disposed on the third dielectric layer.
申请公布号 US8890767(B2) 申请公布日期 2014.11.18
申请号 US201213431142 申请日期 2012.03.27
申请人 Electronics and Telecommunications Research Institute 发明人 Choi Choon Gi;Choi Muhan;Choi Sung-Yool
分类号 G02B27/00;H01Q15/00 主分类号 G02B27/00
代理机构 代理人
主权项 1. An active metamaterial device comprising: a first dielectric layer; a lower electrode over the first dielectric layer; a second dielectric layer over the lower electrode; metamaterial patterns over the second dielectric layer; a couple layer on the metamaterial patterns and the second dielectric layer, wherein the couple layer comprises graphene; a third dielectric layer over the couple layer; an upper electrode over the third dielectric layer; and a bias electrode provided at edges of the couple layer between the couple layer and the third dielectric layer, wherein the bias electrode comprises second and third terminals extending outward from opposing side walls.
地址 Daejeon KR