发明名称 MANUFACTURING METHOD OF ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, GROWTH METHOD OF ORGANIC SINGLE CRYSTAL THIN FILM, ORGANIC SINGLE CRYSTAL THIN FILM, ELECTRONIC DEVICE, AND ORGANIC SINGLE CRYSTAL THIN FILM GROUP
摘要 Provided is a manufacturing method of an organic semiconductor element, the method including supplying an unsaturated organic solution obtained by dissolving an organic compound in a solvent to a growth control region and at least one nucleation control region of a base body having, on one principal plane, the growth control region and the nucleation control region which is provided on one side of the growth control region to be coupled with the growth control region, and allowing an organic semiconductor single crystal thin film composed of the organic compound to grow by evaporating the solvent of the organic solution.
申请公布号 US2014312335(A1) 申请公布日期 2014.10.23
申请号 US201214354069 申请日期 2012.10.25
申请人 Sony Corporation 发明人 Goto Osamu;Hobara Daisuke;Murakami Yosuke
分类号 H01L51/00;H01L51/42;H01L51/50;H01L51/05 主分类号 H01L51/00
代理机构 代理人
主权项 1. A manufacturing method of an organic semiconductor element, comprising: supplying an unsaturated organic solution obtained by dissolving an organic compound in a solvent to a growth control region and at least one nucleation control region of a base body having, on one principal plane, the growth control region and the nucleation control region which is provided on one side of the growth control region to be coupled with the growth control region; and allowing an organic semiconductor single crystal thin film composed of the organic compound to grow by evaporating the solvent of the organic solution.
地址 Tokyo JP