发明名称 |
Silicon photomultiplier with very low optical cross-talk and improved readout |
摘要 |
The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3)of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfils the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device. |
申请公布号 |
EP2793273(A1) |
申请公布日期 |
2014.10.22 |
申请号 |
EP20130164107 |
申请日期 |
2013.04.17 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
MIRZOYAN, RAZMIK;TESHIMA, MASAHIRO;POPOVA, ELENA |
分类号 |
H01L31/18;H01L27/144;H01L31/0224;H01L31/107 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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