发明名称 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND SOLVENT FOR RESIST
摘要 <p>The objective of the present invention is to provide a resist composition with improved LWR performance, CDU performance, defect inhibitory performance, applicability, and storage stability. The solution means of the present invention is a resist composition including a polymer having a unit structure including an acid-dissociable group, a radiative acid-generating material, and a solvent, wherein the solvent has a compound having a ketone carbonyl group and an alcoholic hydroxyl group. The alcoholic hydroxyl group is preferably tertiary. The solvent further preferably includes an alkylene glycol monoalkyl ether carboxylate compound.</p>
申请公布号 KR20140121789(A) 申请公布日期 2014.10.16
申请号 KR20140041038 申请日期 2014.04.07
申请人 JSR CORPORATION 发明人 ASANO YUSUKE;NAKAMURA SHIN ICHI;FUTAI TOMONORI
分类号 G03F7/004;G03F7/20 主分类号 G03F7/004
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