Composite Wafer and a Method for Manufacturing Same

摘要

A composite wafer includes a substrate and a SiC-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. The SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of: a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal. An amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10−4 mg/cm2 to 0.1 mg/cm2.

主权项

1. A composite wafer comprising:
a substrate, comprising a porous carbon substrate core and an encapsulating layer, the encapsulating layer encapsulating the substrate core in an essentially oxygen-tight manner; and a SiC-based functional layer bonded on the substrate, wherein the SiC-based functional layer comprises, at an interface region with the encapsulating layer, at least one of a carbide and a silicide formed by reaction of a portion of the SiC-based functional layer with a carbide-and-silicide-forming metal, and wherein the amount of the carbide-and-silicide-forming metal, integrated over the thickness of the functional layer, is 10−4 mg/cm2 to 0.1 mg/cm.