METHOD OF FORMING DIELECTRIC LAYER ON THE HIGH MOBILITY SUBSTRATE

摘要

Disclosed is a method for forming a dielectric layer with high quality on a substrate having a higher charge mobility than silicon. A natural oxide film is formed on the substrate, wherein the natural oxide film is modified into a protective insulating film, which is a nitride material, through a plasma nitration process. Subsequently, a dielectric layer is formed on the protective insulating film. Heat treatment with two steps is performed after the dielectric layer is formed. By the heat treatment having two steps performed in succession, the internal defect of the dielectric layer is cured and characteristics of an interface between the protective insulating film and the dielectric layer are improved.