发明名称 |
Power device with self-aligned source regions |
摘要 |
A field effect transistor (FET) includes a plurality of trenches extending into a silicon layer, each trench having upper sidewalls that fan out. Contact openings extend into the silicon layer between adjacent trenches such that each trench and an adjacent contact opening form a common upper sidewall portion. Body regions extend between adjacent trenches. Source regions that are self-aligned to corresponding trenches extend in the body regions adjacent opposing sidewalls of each trench, and have a conductivity type opposite that of the body regions. |
申请公布号 |
US8716783(B2) |
申请公布日期 |
2014.05.06 |
申请号 |
US201113270050 |
申请日期 |
2011.10.10 |
申请人 |
HERRICK ROBERT;LOSEE BECKY;PROBST DEAN;FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
HERRICK ROBERT;LOSEE BECKY;PROBST DEAN |
分类号 |
H01L29/66;H01L21/336;H01L27/108;H01L29/417;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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