发明名称 |
Transistors, Methods of Manufacture Thereof, and Image Sensor Circuits |
摘要 |
Transistors, methods of manufacturing thereof, and image sensor circuits are disclosed. In one embodiment, a transistor includes a buried channel disposed in a workpiece, a gate dielectric disposed over the buried channel, and a gate layer disposed over the gate dielectric. The gate layer comprises an I shape in a top view of the transistor. |
申请公布号 |
US2014042506(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201213570157 |
申请日期 |
2012.08.08 |
申请人 |
RAMBERG FREDRIK;LU TSE-HUA;HSU TSUN-LAI;LIANG VICTOR CHIANG;HUANG CHI-FENG;WEI YU-LIN;FU SHU FANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
RAMBERG FREDRIK;LU TSE-HUA;HSU TSUN-LAI;LIANG VICTOR CHIANG;HUANG CHI-FENG;WEI YU-LIN;FU SHU FANG |
分类号 |
H01L29/78;H01L21/336;H01L31/08 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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