发明名称 SEMICONDUCTOR TRANSISTOR MANUFACTURING METHOD, DRIVING CIRCUIT UTILIZING A SEMICONDUCTOR TRANSISTOR MANUFACTURED ACCORDING TO THE SEMICONDUCTOR TRANSISTOR MANUFACTURING METHOD, PIXEL CIRCUIT INCLUDING THE DRIVING CIRCUIT AND A DISPLAY ELEMENT, DISPLAY PANEL HAVING THE PIXEL CIRCUITS DISPOSED IN A MATRIX, DISPLAY APPARATUS PROVIDED WITH THE DISPLAY PANEL
摘要 Provided is a manufacturing method for a semiconductor transistor comprising: forming a resist layer containing resist material on a base layer including a substrate; patterning the resist layer to form apertures therein; forming a metal layer by disposing metallic material to cover the resist layer and to fill the apertures formed in the resist layer; removing a metal oxide layer formed by oxidation of a top surface of the metal layer by performing cleaning by using a cleaning liquid; forming the source electrode and the drain electrode by removing the resist layer by using a dissolution liquid different from the cleaning liquid, the source electrode and the drain electrode constituted of the metallic material having been disposed in the apertures; and forming a semiconductor layer so as to cover the source electrode and the drain electrode.
申请公布号 KR20130111652(A) 申请公布日期 2013.10.11
申请号 KR20117025520 申请日期 2010.12.24
申请人 PANASONIC CORPORATION 发明人 OKUMOTO YUKO;MIYAMOTO AKIHITO
分类号 H01L29/786 主分类号 H01L29/786
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