| 摘要 |
<p>In this silicon single crystal wafer manufacturing method, a rapid heating/cooling apparatus is used, and an oxygen concentration peak region is formed in the vicinity of a surface of a silicon single crystal wafer by diffusing oxygen inward by subjecting the silicon single crystal wafer to first heat treatment wherein the wafer is held for 1-60 seconds under an oxygen-containing atmosphere at a first heat treatment temperature, then, the wafer is cooled to 800°C or below at a temperature reducing speed of 1-100°C/sec, then, by performing second heat treatment, the oxygen in the silicon single crystal wafer is aggregated to the oxygen concentration peak region. Consequently, the method for manufacturing the silicon single crystal wafer having an excellent gettering layer formed in the vicinity of the device-forming region is provided.</p> |
