| 摘要 |
A continuously variable resistor is disclosed. The continuously variable resistor may comprise a first chalcogenide layer and a second chalcogenide layer. The second chalcogenide layers may be connected to the first chalcogenide layer and may have a metal interspersed within it. The second chalcogenide layer may be metal-rich, in a state of solid solution with the interspersed metal. The continuously variable resistor may be configured to exhibit NDR behavior. The continuously variable resistor may be configured to have three or more substantially non-volatile resistance states.
|
