| 摘要 |
<p>Provided is a substrate processing apparatus comprising the following: a processing chamber that can accommodate a plurality of substrates, the interior of which is divided into a plurality of zones; a gas supply system that supplies a first reactive gas, a second reactive gas, and an inert gas to each of the plurality of zones of the processing chamber; and an exhaust system for removing the gas from the zones. A thin film is formed on the substrates in the zones by repeatedly executing a plurality of steps in relation to the zones in the processing chamber containing the plurality of substrates, these steps include the following: a first reactive gas supply step where a first reactive gas is supplied; a first purge step where an inert gas is supplied and the first reactive gas is removed; a second reactive gas supply step where a second reactive gas is supplied; and a second purge step where an inert gas is supplied and the second reactive gas is removed. While the film is being formed, a control unit controls the gas supply system and the gas exhaust system so that the steps being executed simultaneously in each of the zones differ from one another.</p> |
