LARGE-CAPACITY MULTI-VALUE RESISTIVE RANDOM ACCESS MEMORY

摘要

A large-capacity multi-value resistive random access memory, including an upper electrode (1) and a lower electrode (4). A combination of a plurality of resistive material layers (2) and a defect layer (3) is inserted between the upper electrode and the lower electrode. The resistive material layers (2) contact the upper and lower electrodes. The resistive material layer (2) is a thin film such as Ta2O5, TiO2, HfO2, etc. The defect layer (3) is between the resistive material layers (2). The defect layer (3) is a metal thin film such as Ti, Au, Ag, etc. and can increase the storage capacity of the resistive random access memory.