发明名称 Method of batch trimming circuit elements
摘要 Multiple wafers that each has multiple high-precision circuits and corresponding trim control circuits are batch trimmed in a process where each wafer is formed to include openings that expose trimmable circuit elements that are internal to the circuitry of the high-precision circuits. The high-precision circuits and trim control circuits are electrically activated during the trimming phase by metal traces that run along the saw streets. The method attaches a wafer contact structure to each wafer to electrically activate the metal traces. The method places the wafers with the wafer contact structures into a solution where the exposed trimmable circuit elements are electroplated or anodized when the actual output voltage of a high-precision circuit does not match the predicted output voltage of the high-precision circuit.
申请公布号 US8378460(B2) 申请公布日期 2013.02.19
申请号 US20100978492 申请日期 2010.12.24
申请人 NATIONAL SEMICONDUCTOR CORPORATION;HOPPER PETER J.;JOHNSON PETER;SMEYS PETER;FRENCH WILLIAM 发明人 HOPPER PETER J.;JOHNSON PETER;SMEYS PETER;FRENCH WILLIAM
分类号 H01L23/48;H01L21/66;H01L23/544 主分类号 H01L23/48
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