发明名称 IN-SITU CLEAN CHAMBER FOR FRONT END OF LINE FABRICATION
摘要 A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber (100) comprises a chamber body (112) and a support assembly (300) at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels (360) at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly (200) disposed on an upper surface of the chamber body. The lid assembly includes a first electrode (240) and a second electrode (220) which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.
申请公布号 KR101234740(B1) 申请公布日期 2013.02.19
申请号 KR20110090807 申请日期 2011.09.07
申请人 发明人
分类号 H01L21/28;C23C16/455;C23F1/00;H01J37/32;H01L21/00;H01L21/205;H01L21/302;H01L21/3065;H01L21/3205;H01L21/8238;H01L23/12;H01L23/52 主分类号 H01L21/28
代理机构 代理人
主权项
地址