| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a p-type diffusion layer and a manufacturing method of a solar cell element capable of manufacturing a p-type diffusion layer without causing an internal stress and a warpage in a silicon substrate and obtaining a semiconductor substrate having no etching residue on the formed p-type diffusion layer in a manufacturing step of a solar cell element using the semiconductor substrate. <P>SOLUTION: A manufacturing method of a p-type diffusion layer includes the steps of: performing thermal diffusion treatment for a semiconductor substrate provided with a p-type diffusion layer formation composition containing a glass powder including an acceptor element and a dispersion medium; cooling the semiconductor substrate heated for the thermal diffusion treatment at a cooling speed of 5°C/minute or higher and 300°C/minute or lower between a heating temperature of the thermal diffusion treatment and a glass-transition temperature of the glass powder; and removing a glass layer formed on the semiconductor substrate by etching after the cooling. <P>COPYRIGHT: (C)2013,JPO&INPIT |
