发明名称 |
FORMING AIR GAPS IN MEMORY ARRAYS AND MEMORY ARRAYS WITH AIR GAPS THUS FORMED |
摘要 |
Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.
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申请公布号 |
US2013026600(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201113192763 |
申请日期 |
2011.07.28 |
申请人 |
MICRON TECHNOLOGY, INC.;MATTHEW JAMES;HALLER GORDON;WEIMER RONALD A.;HOPKINS JOHN;SHAMANNA VINAYAK K.;SAPRA SANJEEV |
发明人 |
MATTHEW JAMES;HALLER GORDON;WEIMER RONALD A.;HOPKINS JOHN;SHAMANNA VINAYAK K.;SAPRA SANJEEV |
分类号 |
H01L29/06;H01L21/764 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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