PHOTOINDUCED CARRIER LIFETIME MEASURING METHOD, LIGHT INCIDENCE EFFICIENCY MEASURING METHOD, PHOTOINDUCED CARRIER LIFETIME MEASURING DEVICE, AND LIGHT INCIDENCE EFFICIENCY MEASURING DEVICE

摘要

Disclosed is a photoinduced carrier lifetime measuring method capable of obtaining photoinduced carrier effective lifetime of a semiconductor substrate with high accuracy regardless of the surface state of the sample. The method includes the steps of: irradiating a microwave onto a semiconductor substrate while periodically pulse-irradiating an induction light onto the semiconductor substrate; detecting the microwave transmitted through the semiconductor substrate or reflected by the semiconductor substrate; and obtaining the effective lifetime of photoinduced carriers generated in the semiconductor substrate by the pulse irradiation of the induction light, based on an irradiation duration T1 and a non-irradiation duration T2 when performing the induction light pulse irradiation and an integrated value of each microwave intensity obtained by the detection.