| 发明名称 |
INDUCTIVE STRUCTURE FORMED USING THROUGH SILICON VIAS |
| 摘要 |
An inductor for an integrated circuit can include a first turn comprising a first through silicon via (TSV) coupled to a second TSV. The inductor can include a third TSV coupled to the second TSV.
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| 申请公布号 |
US2013020675(A1) |
申请公布日期 |
2013.01.24 |
| 申请号 |
US201113187234 |
申请日期 |
2011.07.20 |
| 申请人 |
XILINX, INC.;KIREEV VASSILI;KARP JAMES |
发明人 |
KIREEV VASSILI;KARP JAMES |
| 分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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