发明名称 |
Contact Metal for Hybridization and Related Methods |
摘要 |
A contact structure for interconnecting a first substrate to an indium interconnect structure on a second substrate. The contact structure comprises a diffusive layer and a non-oxidizing layer, with a thickness of less than approximately 150 nm, positioned on the diffusive layer for alignment with the indium interconnect.
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申请公布号 |
US2012273951(A1) |
申请公布日期 |
2012.11.01 |
申请号 |
US201113231675 |
申请日期 |
2011.09.13 |
申请人 |
GETTY JONATHAN;HAMPP ANDREAS;RAMIREZ AARON M.;MILLER SCOTT S.;RAYTHEON COMPANY |
发明人 |
GETTY JONATHAN;HAMPP ANDREAS;RAMIREZ AARON M.;MILLER SCOTT S. |
分类号 |
H01L23/532;H01L21/60 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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